Datasheet Summary
N-Channel 200 V (D-S) MOSFET
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PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 0.048 at VGS = 10 V
ID (A) 20
TO-252
Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC
APPLICATIONS
- Primary Side Switch
S N-Channel...