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D56/
www.daysemi.jp
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.005 at VGS = 10 V 0.0057 at VGS = 4.5 V 0.0076 at VGS = 2.5 V ID (A)a 30 30 30 15.5 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
D
TO-252
APPLICATIONS
• DC/DC • Low Voltage Drive • POL
G
G
D
S
S N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 20 ± 12 30a 30a 22.6b, c 18.2b, c 70 25a 4.1b, c 20 20 27.7 17.7 4.6b, c 3.