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N-Channel 100-V (D-S) MOSFET
'7830110
ZZZGLQWHNMS
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (:)
100
0.0 at VGS = 10 V 0.0 at VGS = V
ID (A) 0 7.5
FEATURES • TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
TO-252
D
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.
DTU30N10 Datasheet
