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P-Channel 40-V (D-S) MOSFET
DTU60P04
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.012 at VGS = - 10 V - 40
0.018 at VGS = - 4.5 V
ID (A) - 60d - 48d
Qg (Typ.) 60
TO-252
S G
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters
GDS
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.
DTU60P04 Datasheet
