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N-Channel 20-V (D-S) MOSFET
DTU5N0
www.din-tek.jp
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
20 0.0046 at VGS = 4.5 V 0.0062 at VGS = 2.5 V
ID (A)c 65
40
Qg (Typ.) 27 nC
TO-252
GDS Top View
D R G
S
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested
• Typical ESD Protection 4000 V
RoHS
COMPLIANT
APPLICATIONS • OR-ing
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
DTU65N02 Datasheet
