DMN3033LDM
DMN3033LDM is N-Channel MOSFET manufactured by Diodes Incorporated.
.Data Sheet.co.kr
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
- - Low Gate Charge Low RDS(ON):
- 33 mΩ @VGS = 10V
- 40 mΩ @VGS = 4.5V Low Input/Output Leakage Lead Free By Design/Ro HS pliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4)
Mechanical Data
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SOT-26
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Case: SOT-26 Case Material
- Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish
- Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate)
TOP VIEW
Equivalent Circuit
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM IS Value 30 ±20 6.9 5.8 20 2.25 Unit V V A A A
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1)
Thermal Characteristics
@TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 2 62.5 -55 to +150 Unit W °C /W °C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature Range
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://.diodes./products/lead_free/index.php.
Document number: DS31345 Rev. 4
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