DMN3033LSN Datasheet | Diodes Incorporated

.Data Sheet.co.kr N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features - - Low Gate Charge Low RDS(ON): - 30 mΩ @VGS = 10V - 40 mΩ @VGS = 4.5V Low Input/Output Leakage Lead Free By Design/Ro HS pliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Mechanical Data - - - - - - - - Case: SC-59 Case Material - Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) - - - - Drain SC-59 Gate Source Top View Equivalent Circuit Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM IS Value 30 ±20 6 5 24 2.25 Unit V V A A A Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C /W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature...