DT3055 Overview
DT3055 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
DT3055 Key Features
- High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Tr
- 10° 0.254 10°
- SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above
- Continuous Drain Current Maximum Power Dissipation
- 350 135 40 18 25 43 34 10 2.0 6.0
- 2.9 2.3 0.075 0.13
- 3.5 4.0 3.0 0.10 0.22
- V W A m VDS = VGS, ID = 250µA VGS = 10V, ID = 4.0A VGS = 10V. VDS = 10V VDS = 15V, ID = 4.0A BVDSS IDSS IGSSF IGSSR 60
- Forward Current Source