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DT3055L - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Datasheet Summary

Features

  • High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55.
  • 10° 0.254 10° Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.356 16° A B C D E D C D G E J K D S G H G P R S H J K L M N P R S L M N Mechanical Data.
  • SOT-223 Plastic Case Terminal Connections: See Ou.

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Datasheet Details

Part number DT3055L
Manufacturer DIODES Incorporated
File Size 73.61 KB
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DT3055L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 — 10° 0.254 10° Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.356 16° A B C D E D C D G E J K D S G H G P R S H J K L M N P R S L M N Mechanical Data · · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above All Dimensions in mm Maximum Ratings Drain-Source Voltage 25°C unless otherwise specified Symbol VDSS VGSS Note 1a Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 60 ±20 ±3.5 ±25 3.0 1.3 1.
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