DT451AN - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance
SOT-223
A B
Dim A B C D E
Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55.
10° 0.254 10°
Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.356 16°
D
C D
G
E
D
S
G H
G
P R S
H J K L M N P R S
J K L M
N
Mechanical Data.
SOT-223 Plastic Case Terminal Connections: See Ou.
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DT451AN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance
SOT-223
A B
Dim A B C D E
Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 — 10° 0.254 10°
Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.356 16°
D
C D
G
E
D
S
G H
G
P R S
H J K L M N P R S
J K L M
N
Mechanical Data
· · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above
25°C unless otherwise specified Symbol VDSS VGSS Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 30 ±20 ±7.2 ±25 3.0 1.3 1.
DT451AN Datasheet
