DT451N Description
DT451N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
DT451N Key Features
- High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Tr
- 10° 0.254 10°
- SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above
- 730 370 140 20 15 19 10 16 1.8 4.5
- VGS(th) 1.0 0.7
- 1.6 1.2 0.042 0.065 0.064
- 6.0 3.0 2.2 0.05 0.10 0.08