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DT451N - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Key Features

  • High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55.
  • 10° 0.254 10° Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.356 16° A B C D E D C D G E J K D S G H G P R S H J K L M N P R S L M N Mechanical Data.
  • SOT-223 Plastic Case Terminal Connections: See Ou.

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DT451N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 — 10° 0.254 10° Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.