This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Full PDF Text Transcription for BS170F (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BS170F. For precise diagrams, and layout, please refer to the original PDF.
BS170F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET Product Summary BVDSS 60V RDS(ON) Max 5Ω @ VGS = 10V ID Max TA = +25°C 0.15A Description and Applications This MOS...
View more extracted text
GS = 10V ID Max TA = +25°C 0.15A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. • Motor controls • Power-management functions Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface-Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3) • For automotive applications requiring specific change control (i.e.
BS170F Datasheet
