BS170 Datasheet | Diodes Incorporated

N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features - - - - High Input Impedance Fast Switching Speed CMOS Logic patible Input No Thermal Runaway or Secondary Breakdown Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 - 0.63 3.68 2.67 1.40 Mechanical Data - - - - Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.) BOTTOM VIEW SG D All Dimensions in mm Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VDGS VGS ID Pd Tj Tj, TSTG Value 60 60 ±20 300 830 150 -55 to +150 Unit V V V mA mW °C...