| Part Number | BS170 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance.
* High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability * These are Pb *Free Devices DATA SHEET BS170 DGS TO *92 3 4.825x4.76 CASE 135AN D GS TO *92 3 4.83x4.76 LEADFORMED CASE 135AR MMBF170 D G S SOT. |
BS170 Datasheet and Specifications PDF
The BS170 is a N-channel MOSFET.
| Part Number | BS170 Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Diodes Incorporated |
| Overview |
BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features
· · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown
E
A B
Dim A B C D E TO-92 M.
* * * * High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 * 0.63 3.68 2.67 1.40 Mechanical Data * * * * Case: TO-92, Plastic Leads: Solderable per MIL-STD-202. |
| Part Number | BS170 Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resista.
* High density cell design for low RDS(ON). * Voltage controlled small signal switch. * Rugged and reliable. * High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS. |
| Part Number | BS170 Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS170/D
TMOS FET Switching
N–Channel — Enhancement
1 DRAIN
BS170
2 GATE 3 SOURCE
®
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–.
dc, ID = 250 mAdc) VGS(Th) rDS(on) ID(off) gfs 0.8 * * * 2.0 1.8 * 200 3.0 5.0 0.5 * Vdc Ω µA mmhos SMALL * SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) Ciss * * 60 pF SWITCHING CHARACTERISTICS Turn *On Time (ID = 0.2 Adc) See Figure 1 Turn *Off Time (ID = 0.2 Adc) Se. |