NXP Semiconductors BS170
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BS170 |
|---|---|
| Datasheet | BS170 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.FEATURES
● Very low RDS(on).● Direct interface to C-MOS, TTL, etc.
● High-speed switching.
● No secondary breakdown. PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Junction temperature Drain-source ON-resistance VGS = 10 V; ID = 200 mA RDS(on) max. VDS VGS ID Ptot Tj max. max. max. max. max. BS170 60 V 15 V 500 mA 830 mW 150 °C 5 Ω handbook, halfpage d 1 2 3 g MAM146 s Note: Various pin configurations available. Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage Gate-source voltage...
