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DISCRETE SEMICONDUCTORS
DATA SHEET
BS170 N-channel vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No secondary breakdown. PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Junction temperature Drain-source ON-resistance VGS = 10 V; ID = 200 mA RDS(on) max.
BS170 Datasheet
