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BS170 - N-channel MOSFET

Datasheet Summary

Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while provide rugged, reliable, and fast switching performance.

Features

  • High Density Cell Design for Low RDS(ON).
  • Voltage Controlled Small Signal Switch.
  • Rugged and Reliable.
  • High Saturation Current Capability.
  • These are Pb.
  • Free Devices DATA SHEET www. onsemi. com BS170 DGS TO.
  • 92 3 4.825x4.76 CASE 135AN D GS TO.
  • 92 3 4.83x4.76.

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Datasheet preview – BS170

Datasheet Details

Part number BS170
Manufacturer ON Semiconductor
File Size 880.96 KB
Description N-channel MOSFET
Datasheet download datasheet BS170 Datasheet
Additional preview pages of the BS170 datasheet.

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Full PDF Text Transcription

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Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • These are Pb−Free Devices DATA SHEET www.onsemi.
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