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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS170/D
TMOS FET Switching
N–Channel — Enhancement
1 DRAIN
BS170
2 GATE 3 SOURCE
®
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current(1) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 ± 20 ± 40 0.5 350
1
Unit Vdc Vdc Vpk Adc mW °C
2
3
CASE 29–04, STYLE 30 TO–92 (TO–226AA)
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) IGSS V(BR)DSS — 60 0.
BS170 Datasheet
