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DGD2108 - HALF-BRIDGE GATE DRIVER

General Description

The DGD2108 is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration.

High-voltage processing techniques enable the DGD2108’s high-side to switch to 600V in a bootstrap operation.

Key Features

  • Floating high-side driver in bootstrap operation to 600V.
  • Drives two N-Channel MOSFETs or IGBTs in a half bridge configuation.
  • Outputs tolerant to negative transients.
  • Internal logic and dead time of 540ns to protect MOSFETs.
  • Wide logic and low-side gate driver supply voltage: 10V to 20V.
  • Logic inputs (HIN and LIN.
  • ) 3.3V capability.
  • Schmitt triggered logic inputs with internal pull down.
  • Undervoltage lockout for high and low side drivers.
  • Extende.

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Full PDF Text Transcription for DGD2108 (Reference)

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Description The DGD2108 is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing ...

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ETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2108’s high-side to switch to 600V in a bootstrap operation. The DGD2108 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction. Internal deadtime protects high-voltage MOSFETs. The DGD2108 is offered in SO-8 (Type TH) package, the operating temperature extends from -40°C to +125°C.

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