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DGD2108 Datasheet

Manufacturer: Diodes Incorporated
DGD2108 datasheet preview

DGD2108 Details

Part number DGD2108
Datasheet DGD2108-Diodes.pdf
File Size 702.19 KB
Manufacturer Diodes Incorporated
Description HALF-BRIDGE GATE DRIVER
DGD2108 page 2 DGD2108 page 3

DGD2108 Overview

The DGD2108 is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2108’s high-side to switch to 600V in a bootstrap operation. The DGD2108 logic inputs are patible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices.

DGD2108 Key Features

  • Floating high-side driver in bootstrap operation to 600V
  • Drives two N-Channel MOSFETs or IGBTs in a half bridge
  • Outputs tolerant to negative transients
  • Internal logic and dead time of 540ns to protect MOSFETs
  • Wide logic and low-side gate driver supply voltage: 10V to 20V
  • Logic inputs (HIN and LIN-) 3.3V capability
  • Schmitt triggered logic inputs with internal pull down
  • Undervoltage lockout for high and low side drivers
  • Extended temperature range: -40°C to +125°C
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)

DGD2108 Applications

  • Matte Tin Plated Leads, Solderable per

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