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DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA = +25°C
-460mA -420mA -350mA
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
• DC-DC converters • Load switches • Power-management functions
Features and Benefits
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up to 3kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free.