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DMG1013T - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-0.46 A.
  • RDS(ON) ＜ 0.7Ω (VGS =-4.5V).
  • RDS(ON) ＜ 0.9Ω (VGS =-2.5V).
  • RDS(ON) ＜ 1.3Ω (VGS =-1.8V).
  • ESD Protected Up To 3KV Drain SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 Unit:mm 0.15±0.05 0.55 (REF. ) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 + 0.8 0.1 -0.1 1.Gate 2.Source 3.Drain Gate Gate Protection Diode Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage.

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SMD Type P-Channel MOSFET DMG1013T (KMG1013T) MOSFET ■ Features ● VDS (V) =-20V ● ID =-0.46 A ● RDS(ON) ＜ 0.7Ω (VGS =-4.5V) ● RDS(ON) ＜ 0.9Ω (VGS =-2.5V) ● RDS(ON) ＜ 1.3Ω (VGS =-1.8V) ● ESD Protected Up To 3KV Drain SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 Unit:mm 0.15±0.05 0.55 (REF.) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 + 0.8 0.1 -0.1 1.Gate 2.Source 3.Drain Gate Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25°C Pulsed Drain Current Power Dissipation Thermal Resistance.