Kexin Electronics DMG1013T
P-Channel MOSFET
| Part No. | DMG1013T |
|---|---|
| Datasheet | DMG1013T Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-20V● ID =-0.46 A
● RDS(ON) ＜ 0.7Ω (VGS =-4.5V)
● RDS(ON) ＜ 0.9Ω (VGS =-2.5V)
● RDS(ON) ＜ 1.3Ω (VGS =-1.8V)
● ESD Protected Up To 3KV Drain SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 Unit:mm 0.15±0.05 0.55 (REF.) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 + 0.8 0.1 -0.1 1.Gate 2.Source 3.Drain Gate Gate Protection Diode Source
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Ta = 85°C Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating -20 ±6 -0.46 -0.33 -6 0.27 461 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET P-Channel MOSFET DMG1013T (KMG1013T)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current VDSS IDSS IGSS Gate Threshold...
