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DMG1023UV - Dual P-Channel MOSFET

Key Features

  • Dual P-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Up To 3KV.
  • Lead Free By Design/RoHS Compliant (Note 1).
  • Halogen and Antimony Free "Green" Device (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability DMG1023UV DUAL P-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Dual P-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Up To 3KV  Lead Free By Design/RoHS Compliant (Note 1)  Halogen and Antimony Free "Green" Device (Note 2)  Qualified to AEC-Q101 Standards for High Reliability DMG1023UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data  Case: SOT563  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below  Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.