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DMG1026UV - DUAL N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.
  • An automotive-compliant part is available under separate datasheet (DMG1026UVQ).

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Full PDF Text Transcription for DMG1026UV (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMG1026UV. For precise diagrams, tables, and layout, please refer to the original PDF.

NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMG1026UV 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V ID TA ...

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ct Summary BVDSS 60V RDS(ON) 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V ID TA = +25°C 440mA 410mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.