DMG4710SSS Datasheet N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

DMG4710SSS n-channel enhancement mode mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMG4710SSS
Manufacturer	Diodes Incorporated
File Size	154.26 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Download	DMG4710SSS Download (PDF)

General Description

and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• DC-DC Converters • Power management functions

Overview

DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 12.5mΩ @ VGS= 10V 14.8mΩ @ VGS= 4.5V ID max TA = 25°C (Note 5) 11.7A 10.

Key Features

DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
Low RDS(ON) - minimizes conduction losses.
Low VSD - reducing the losses due to body diode conduction.
Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
Low gate capacitance (Qg/Qgs) ratio.
reduces risk of shootthrough or cross conduction currents at high frequencies.
Avalanche.

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