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DMG4712SSS - N-Channel MOSFET

Features

  • High Density UMOS with Schottky Barrier Diode.
  • Low Leakage Current at High Temperature.
  • High Conversion Efficiency.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency.
  • UIS Tested, RG Tested.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for Hi.

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Datasheet preview – DMG4712SSS

Datasheet Details

Part number DMG4712SSS
Manufacturer DIODES
File Size 364.36 KB
Description N-Channel MOSFET
Datasheet download datasheet DMG4712SSS Datasheet
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NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMG4712SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features  High Density UMOS with Schottky Barrier Diode  Low Leakage Current at High Temperature  High Conversion Efficiency  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency  UIS Tested, RG Tested  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound.
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