DMG4812SSS Datasheet | Diodes Incorporated

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA = +25°C 10.7A 9.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features - DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: - Low RDS(ON) - minimizes conduction losses - Low VSD - reducing the losses due to body diode conduction - Low Qrr - lower Qrr of the integrated Schottky reduces body diode...