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DMG4812SSS - N-Channel MOSFET

Datasheet Summary

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
  • Low RDS(ON) - minimizes conduction losses.
  • Low VSD - reducing the losses due to body diode conduction.
  • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
  • Low gate capacitance (Qg/Qgs) ratio.
  • reduces risk of shoot-through or cross conduction currents at high frequencies.
  • Avalanche rugged.
  • IAR an.

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Datasheet Details

Part number DMG4812SSS
Manufacturer DIODES
File Size 233.68 KB
Description N-Channel MOSFET
Datasheet download datasheet DMG4812SSS Datasheet
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DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA = +25°C 10.7A 9.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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