Click to expand full text
DMN1025UFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
N-Channel 12V
RDS(ON) MAX
25mΩ @ VGS = 4.5V 30mΩ @ VGS = 2.5V 38mΩ @ VGS = 1.8V
ID MAX TA = +25°C
6.9A 6.3A 5.5A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load Switch Power Management Functions Portable Power Adaptors
Features
Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e.