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DMN1029UFDB Datasheet N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN1029UFDB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) Max 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V ID MAX TA = +25°C 5.6A 5.1A 4.5A 3.

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Applications  Load switches  Power-management functions  Portable power adaptors

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Low Profile, 0.6mm Max Height.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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