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DMN1029UFDB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 12V
RDS(ON) Max
29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V
ID MAX TA = +25°C
5.6A 5.1A 4.5A 3.7A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Applications
Load switches Power-management functions Portable power adaptors
Features
Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e.