DMN1032UCB4 Datasheet | Diodes Incorporated

ADVANCED INFORMATION PART OBSOLETE - CONTACT US N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 12V RDS(ON) 18mΩ Qg 3.2nC Qgd 0.3nC ID 4.8A Typ. @ VGS = 4.5V, TA = +25°C Description This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by bining low thermal impedance with minimal RDS(ON) per footprint area. Applications - DC-DC converters - Battery management - Load switches Features - LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for...