DMN1032UCB4 Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCED INFORMATION PART OBSOLETE - CONTACT US DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 12V RDS(ON) 18mΩ Qg 3.2nC Qgd 0.3nC ID 4.8A Typ. @ VGS = 4.

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Datasheet Details

Part number	DMN1032UCB4
Manufacturer	Diodes Incorporated
File Size	533.91 KB
Description	N-CHANNEL MOSFET
Download	DMN1032UCB4 Download (PDF)

General Description

This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.

Applications  DC-DC converters  Battery management  Load switches

Key Features

LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching.
VGS(th) = 0.8V Typ. for a Low Turn-On Potential.
CSP with Footprint 1.0mm × 1.0mm.
Height = 0.62mm for Low Profile.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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