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DMN1032UCB4 - N-CHANNEL MOSFET

Description

This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.

Features

  • LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching.
  • VGS(th) = 0.8V Typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.0mm × 1.0mm.
  • Height = 0.62mm for Low Profile.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – DMN1032UCB4

Datasheet Details

Part number DMN1032UCB4
Manufacturer DIODES
File Size 533.91 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet DMN1032UCB4 Datasheet
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Full PDF Text Transcription

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ADVANCED INFORMATION PART OBSOLETE - CONTACT US DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 12V RDS(ON) 18mΩ Qg 3.2nC Qgd 0.3nC ID 4.8A Typ. @ VGS = 4.5V, TA = +25°C Description This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Applications  DC-DC converters  Battery management  Load switches Features  LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching  VGS(th) = 0.8V Typ. for a Low Turn-On Potential  CSP with Footprint 1.
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