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DMN10H170SK3 - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Case: TO252 (DPAK)

Case Material: Molded Plastic, “Green” Molding Compound.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) Max 140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V ID TC = +25°C 12A 11A Features  Low On-Resistance  Low Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Case: TO252 (DPAK)  Case Material: Molded Plastic, “Green” Molding Compound.