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DMN10H170SVT Datasheet

Manufacturer: Diodes Incorporated
DMN10H170SVT datasheet preview

Datasheet Details

Part number DMN10H170SVT
Datasheet DMN10H170SVT-Diodes.pdf
File Size 468.28 KB
Manufacturer Diodes Incorporated
Description N-Channel MOSFET
DMN10H170SVT page 2 DMN10H170SVT page 3

DMN10H170SVT Overview

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

DMN10H170SVT Key Features

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Case: TSOT26
  • Case Material: Molded Plastic, “Green” Molding pound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Finish  Matte Tin Annealed over Copper Leadframe
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