DMN2041UFDB Datasheet | Diodes Incorporated

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) MAX 40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V ID MAX TA = +25°C 4.7A 3.7A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features - Low On-Resistance - Low Input Capacitance - Low Profile, 0.6mm Max Height - ESD Protected Gate - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200,...