Datasheet Summary
ADVANCE INFORMATION
Product Summary
BVDSS 30V
RDS(ON) Max 28mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V
ID Max TA = +25°C
7.0A
6.5A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- General Purpose Interfacing Switch
- Power Management Functions
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
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