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DMN32D2LFB4
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• • • • • • • • Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe.