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DMN53D0LQ - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected to 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN53D0LQ is suitable for automotive.

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Other Datasheets by Diodes Incorporated

Part Number Description
DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LDW N-CHANNEL MOSFET
DMN53D0LDWQ 50V Dual N-CHANNEL MOSFET
DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR
DMN53D0LW N-CHANNEL MOSFET
DMN53D0U N-Channel MOSFET
DMN5010VAK DUAL N-CHANNEL MOSFET
DMN5040LSS 50V N-CHANNEL MOSFET
DMN55D0UT N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500mA 200mA Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. SOT23 Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.