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DMN53D0U - N-Channel MOSFET

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case: SOT23 Case Material: Molded Plastic, “Green” M

Features

  • N-Channel MOSFET.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Datasheet preview – DMN53D0U

Datasheet Details

Part number DMN53D0U
Manufacturer DIODES
File Size 327.74 KB
Description N-Channel MOSFET
Datasheet download datasheet DMN53D0U Datasheet
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Full PDF Text Transcription

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NEW PRODUCT DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300 mA 200 mA Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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