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DMN63D1LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 60V
RDS(ON) max
2Ω @ VGS = 10V 3Ω @ VGS = 5V
ID max TA = +25°C
250mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control Power Management Functions
SOT363
G1
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.