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Product Summary
BVDSS 60V
RDS(on) Max
6Ω @ VGS = 5V 5Ω @ VGS = 10V
ID TA = +25°C
90mA
115mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
• Load Switches
DMN66D0LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1KV (HBM) • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change
control (i.e.
DMN66D0LDW Datasheet
