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DMN66D0LDW Datasheet DUAL N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary BVDSS 60V RDS(on) Max 6Ω @ VGS = 5V 5Ω @ VGS = 10V ID TA =.

General Description

and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

• Load Switches DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • ESD Protected Gate, 1KV (HBM).
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.