DMN66D0LDW Datasheet | Diodes Incorporated

Product Summary BVDSS 60V RDS(on) Max 6Ω @ VGS = 5V 5Ω @ VGS = 10V ID TA = +25°C 90mA 115mA Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. - Load Switches DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Dual N-Channel MOSFET - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Small Surface Mount Package - ESD Protected Gate, 1KV (HBM) - Lead-Free Finish; RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device...