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DMP21D0UFB - 20V P-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Portable electronics Case: DFN1

Key Features

  • Footprint of just 0.6mm.
  • thirteen times smaller than SOT23 Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 3KV Qualified to AEC-Q101 Standards for High Reliability 2 Mechanical Data.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Product Line of Diodes Incorporated DMP21D0UFB 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ID Max V(BR)DSS RDS(on) Max 495mΩ @ VGS = -4.5V -20V 690mΩ @ VGS = -2.5V 960mΩ @ VGS = -1.8V @ TA = 25°C (Note 4) -0.77A -0.67A -0.57A Features and Benefits • • • • • • • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 3KV Qualified to AEC-Q101 Standards for High Reliability 2 Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.