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Product Summary
V(BR)DSS -20V
RDS(on) Max
495mΩ @ VGS = -4.5V 690mΩ @ VGS = -2.5V 960mΩ @ VGS = -1.8V
ID Max @ TA = 25°C
(Note 4) -0.59A
-0.50A
-0.42A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Portable electronics
A Product Line of Diodes Incorporated
DMP21D0UT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Footprint of just 3mm2 – less than half the size of SOT23 • 0.8mm profile – ideal for low profile applications • Low Gate Threshold Voltage • Fast Switching Speed • ESD Protected Gate 3KV • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free.
DMP21D0UT Datasheet
