Click to expand full text
ADVNAENWCEP IRNOFDOURCTMATION
Summary
V(BR)DSS
-20V
RDS(on) max 200mΩ @VGS = -4.5V 290mΩ @VGS = -2.5V 390mΩ @VGS = -1.8V 650mΩ @VGS = -1.5V
ID max -1.7 A -1.3 A -1.1 A -0.5 A
Description
This device provides a high performance, low RDS(ON) P-Channel MOSFET in the thermally and spatially efficient DFN1616-6 package. The low RDS(ON) of this MOSFET ensures conduction losses are kept making it ideal for use in the following applications:
Applications
• Battery disconnect switch • Load switch for power management functions
DMP2200UFCL
Dual P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Typical off board profile of 0.5mm - ideally suited for thin applications
• Low RDS(ON) – minimizes conduction losses • PCB footprint of 2.