Datasheet Summary
Product Summary
BVDSS -30V
RDS(ON) MAX
50mΩ @ VGS =-10V 70mΩ @ VGS =-4.5V
ID MAX TA = +25°C
-4.3A -3.7A
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
SOT23
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
- Case: SOT23
- Case Material: Molded...
