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DMP57D5UFB
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• Low On-Resistance: RDS(ON) ≤ 6Ω @ VGS = -4.0V RDS(ON) ≤ 8Ω @ VGS = -2.5V Very Low Gate Threshold Voltage, ≤ 1.0V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate, 1KV Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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DFN1006-3
NEW PRODUCT
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Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ NiPdAu over Copper leadframe.