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DMP58D0LFB
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -50V RDS(ON) 8Ω @ VGS = -5V Package X1-DFN1006-3 ID TA = +25°C -310A
Features
• • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 1kV Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Mechanical Data
• • • • • Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound.