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DMS3016SSS - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
  • Low RDS(ON) - minimizes conduction losses.
  • Low VSD - reducing the losses due to body diode conduction.
  • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
  • Low gate capacitance (Qg/Qgs) ratio.
  • reduces risk of shootthrough or cross conduction currents at high frequencies.
  • Avalanche.

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Datasheet preview – DMS3016SSS

Datasheet Details

Part number DMS3016SSS
Manufacturer DIODES
File Size 146.44 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMS3016SSS Datasheet
Additional preview pages of the DMS3016SSS datasheet.

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NEW PRODUCT DMS3016SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Low VSD - reducing the losses due to body diode conduction • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated • Lead Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound.
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