DMS3016SFG Overview
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMS3016SFG Key Features
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
- Low RDS(ON)
- minimize conduction losses
- Low VSD
- reducing the losses due to body diode conduction
- Low Qrr
- lower Qrr of the integrated Schottky reduces body diode
- Low gate capacitance (Qg/Qgs) ratio
- reduces risk of shoot
- Avalanche rugged
DMS3016SFG Applications
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
