DMS3016SFG
DMS3016SFG is N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
- Low RDS(ON)
- minimize conduction losses
- Low VSD
- reducing the losses due to body diode conduction
- Low Qrr
- lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio
- reduces risk of shoot- through or cross conduction currents at high frequencies
- Avalanche rugged
- IAR and EAR rated
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- Lead-Free Finish; Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
Applications
- DC-DC Converters
- Power management functions
- Analog Switch
Mechanical Data
- Case: POWERDI3333-8
- Case Material: Molded Plastic, “Green” Molding pound.
- UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
- Weight: 0.072 grams (approximate)
POWERDI3333-8
S Pin 1 S S
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