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DMS3016SSSA - N-Channel MOSFET

Key Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
  • Low RDS(ON) - minimizes conduction losses.
  • Ultra Low VSD.
  • enhanced to reduce losses due to body diode conduction.
  • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
  • Low gate capacitance (Qg/Qgs) ratio.
  • reduces risk of shootthrough or cross conduction currents at high frequencies.

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DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Ultra Low VSD – enhanced to reduce losses due to body diode conduction • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated • Lead Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound.