Datasheet4U Logo Datasheet4U.com

DMT6007LFG - N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features

  • Low RDS(ON).
  • Ensures On-State Losses are Minimized.
  • Excellent Qgd ×RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converters.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area by enabling smaller end products.
  • 100% UIS (Avalanche) Rated.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards.

📥 Download Datasheet

Datasheet preview – DMT6007LFG

📁 Similar Datasheet

Other Datasheets by Diodes

Full PDF Text Transcription

Click to expand full text
ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT Green DMT6007LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6mΩ @ VGS = 10V 8.5mΩ @ VGS = 4.5V ID Max TC = +25°C 80A 70A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Published: |