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FMMT560Q - 500V PNP HIGH VOLTAGE TRANSISTOR

General Description

This bipolar junction transistor (BJT) has been designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > -500V.
  • IC = -150mA high Continuous Collector Current.
  • ICM Up to -500mA Peak Pulse Current.
  • Excellent hFE Characteristics up to IC = -100mA.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The FMMT560Q is suitable for automotive.

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Description This bipolar junction transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features • BVCEO > -500V • IC = -150mA high Continuous Collector Current • ICM Up to -500mA Peak Pulse Current • Excellent hFE Characteristics up to IC = -100mA • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The FMMT560Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.