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FMMT560 - PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Key Features

  • Excellent hFE characterisristics up to IC=50mA.
  • Low Saturation voltages FMMT560 C.

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SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages FMMT560 C PARTMARKING DETAIL – 560 B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -500 -500 -5 -500 -150 500 -55 to +150 UNIT V V V mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).