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FMMT591Q - PNP MEDIUM POWER TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > -60V.
  • IC = -1A High Continuous Collector Current.
  • ICM = -2A Peak Pulse Current.
  • RSAT = 295mΩ for a Low Equivalent On-Resistance.
  • hFE characterized up to -2A for high current gain hold up.
  • Complementary NPN Type: FMMT491Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) A Product Line of Diodes Incorpora.

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Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > -60V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  RSAT = 295mΩ for a Low Equivalent On-Resistance  hFE characterized up to -2A for high current gain hold up  Complementary NPN Type: FMMT491Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.