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FMMT591Q Datasheet PNP Medium Power Transistor

Manufacturer: Diodes Incorporated

Overview: Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

General Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > -60V.
  • IC = -1A High Continuous Collector Current.
  • ICM = -2A Peak Pulse Current.
  • RSAT = 295mΩ for a Low Equivalent On-Resistance.
  • hFE characterized up to -2A for high current gain hold up.
  • Complementary NPN Type: FMMT491Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) A Product Line of Diodes Incorpora.

FMMT591Q Distributor

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