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FMMT591Q

Manufacturer: Diodes Incorporated
FMMT591Q datasheet preview

Datasheet Details

Part number FMMT591Q
Datasheet FMMT591Q-Diodes.pdf
File Size 559.45 KB
Manufacturer Diodes Incorporated
Description PNP MEDIUM POWER TRANSISTOR
FMMT591Q page 2 FMMT591Q page 3

FMMT591Q Overview

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

FMMT591Q Key Features

  • BVCEO > -60V
  • IC = -1A High Continuous Collector Current
  • ICM = -2A Peak Pulse Current
  • RSAT = 295mΩ for a Low Equivalent On-Resistance
  • hFE characterized up to -2A for high current gain hold up
  • plementary NPN Type: FMMT491Q
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

FMMT591Q Applications

  • Matte Tin Plated Leads, Solderable per

FMMT591 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Zetex Semiconductors Logo FMMT591 Medium power PNP transistor Zetex Semiconductors
GME Logo FMMT591 PNP Silicon Epitaxial Planar Transistor GME
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MCC Logo FMMT591 PNP Transistor MCC
LGE Logo FMMT591 PNP Transistor LGE
Diodes Incorporated logo - Manufacturer

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FMMT591Q Distributor

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