Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
- BVCEO > -60V.
- IC = -1A High Continuous Collector Current.
- ICM = -2A Peak Pulse Current.
- RSAT = 295mΩ for a Low Equivalent On-Resistance.
- hFE characterized up to -2A for high current gain hold up.
- Complementary NPN Type: FMMT491Q.
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony Free. “Green” Device (Note 3).
- Qualified to AEC-Q101 Standards for High Reliability.
- PPAP Capable (Note 4)
A Product Line of Diodes Incorpora.
FMMT591Q Datasheet
