Datasheet Summary
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
- BVCEO > -60V
- IC = -1A High Continuous Collector Current
- ICM = -2A Peak Pulse Current
- RSAT = 295mΩ for a Low Equivalent On-Resistance
- hFE characterized up to -2A for high current gain hold up
- plementary NPN Type: FMMT491Q
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
A Product Line of Diodes Incorporated
60V PNP MEDIUM POWER TRANSISTOR IN SOT23
Mechanical Data
- Case: SOT23
- Case...
